Short-Time Diffusion of Aluminium in Silicon and Co-Diffusion with Phosphorus and Boron
p.1009
p.1009
Study of Growth and Shrinkage Mechanism of Extrinsic Stacking Faults in Silicon by Gold Diffusion
p.1015
p.1015
Diffusion of Gold into Plastically Deformed Undoped and Boron-Doped Silicon
p.1021
p.1021
On Point Defect Gettering by Back-Side Damage in the Si-SiO2 System
p.1027
p.1027
Impurity Diffusion in a Semiconductor in Two States Differing in Diffusion Coefficient and in the Charge of the Impurity Atoms
p.1031
p.1031
To the Theory of the Diffusion via Kick-Out Mechanism: The Analytical Solution in an Explicit Form
p.1037
p.1037
Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against Simple Vacancy Mechanism
p.1041
p.1041
Bulk and Grain Boundary Diffusion of Ge and Sn in Intrinsic Germanium
p.1047
p.1047
Diffusion of Silicon and Phosphorus into Germanium as Studied by Secondary Ion Mass Spectrometry
p.1053
p.1053
Impurity Diffusion in a Semiconductor in Two States Differing in Diffusion Coefficient and in the Charge of the Impurity Atoms
Abstract:
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Periodical:
Defect and Diffusion Forum (Volumes 143-147)
Pages:
1031-1036
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Online since:
January 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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