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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 143-147Study of Growth and Shrinkage Mechanism of...

Study of Growth and Shrinkage Mechanism of Extrinsic Stacking Faults in Silicon by Gold Diffusion

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Diffusion in Materials DIMAT 1996

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Pages:

1015-1020

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.143-147.1015

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Online since:

January 1997

Authors:

Masami Morooka

Keywords:

Gold in Silicon, Impurity Diffusion in Silicon, Lattice Defect, Point Defect, Self-Interstitial, Si:Au, Stacking Fault

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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