Unique Diffusion of Phosphorus in Silicon Based on the Pair Diffusion Model

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Edited by:

H. Mehrer, Chr. Herzig, N.A. Stolwijk, H. Bracht

Pages:

999-1002

DOI:

10.4028/www.scientific.net/DDF.143-147.999

Citation:

M. Yoshida and E. Arai, "Unique Diffusion of Phosphorus in Silicon Based on the Pair Diffusion Model", Defect and Diffusion Forum, Vols. 143-147, pp. 999-1002, 1997

Online since:

January 1997

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$35.00

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