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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 143-147Unique Diffusion of Phosphorus in Silicon Based on...

Unique Diffusion of Phosphorus in Silicon Based on the Pair Diffusion Model

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Diffusion in Materials DIMAT 1996

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Pages:

999-1002

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.143-147.999

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Online since:

January 1997

Authors:

M. Yoshida, Eisuke Arai

Keywords:

Pair Diffusion Model, Phosphorus, Self-Interstitial, Silicon, Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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