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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 148-149Point Defect Behaviour Resulting from Dopant...

Point Defect Behaviour Resulting from Dopant Diffusions in Silicon

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Defect and Diffusion Forum Vols. 148-149

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Periodical:

Defect and Diffusion Forum (Volumes 148-149)

Pages:

48-102

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.148-149.48

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Online since:

March 1997

Authors:

Takahisa Okino

Keywords:

Diffusion, Dopant, Impurity Diffusion, Microdefects, Oxidation Stacking Fault, Point Defect, Self-Diffusion, Semiconductor, Silicon, Swirl Defect, Vacancy Self-Interstitial

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Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

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