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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 148-149Transmission Electron Microscopy Study of the...

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

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Defect and Diffusion Forum Vols. 148-149

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Periodical:

Defect and Diffusion Forum (Volumes 148-149)

Pages:

122-128

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.148-149.122

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Online since:

March 1997

Authors:

D.P. Yu, L.S. Chen, G.Y. Zhang, Y.Z. Tong, Z.J. Yang, S.X. Jin, L.P. You, Zhan Qiang Liu, Z. Zhang

Keywords:

Gallium Nitride (GaN), Microstructure, Organometallic Vapor Phase Epitaxy, Semiconductor, TEM

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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