Enhanced Diffusion Following Point Defect Injection into B in SiGe and Si

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Edited by:

Y. Limoge and J.L. Bocquet

Pages:

717-722

DOI:

10.4028/www.scientific.net/DDF.194-199.717

Citation:

A. F.W. Willoughby et al., "Enhanced Diffusion Following Point Defect Injection into B in SiGe and Si", Defect and Diffusion Forum, Vols. 194-199, pp. 717-722, 2001

Online since:

April 2001

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$35.00

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