Use of Bulk Diffusion Measurements to Study Barrier Layers
a.757
a.757
Impurity Diffusion under Mechanical Stress in Semiconductor Crystals
a.758
a.758
Schwoebel-Ehrlich Barrier
a.759
a.759
Generalized Einstein Relation for Disordered Semiconductors
a.760
a.760
Controlled Impurity Diffusion in Semiconductors
a.761
a.761
Defects on III-V Semiconductor Surfaces
a.762
a.762
Evolution of Point Defects in Semiconductors
a.763
a.763
Vacancy-Order-Induced Optical Anisotropy in 1II1III2VI4 Compounds
a.764
a.764
Glassy Semiconductors and Negative-U Centers
a.765
a.765
Controlled Impurity Diffusion in Semiconductors
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