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Abstracts
Generalized Einstein Relation for Disordered Semiconductors
a.760
Controlled Impurity Diffusion in Semiconductors
a.761
Defects on III-V Semiconductor Surfaces
a.762
Evolution of Point Defects in Semiconductors
a.763
Vacancy-Order-Induced Optical Anisotropy in 1II1III2VI4 Compounds
a.764
Glassy Semiconductors and Negative-U Centers
a.765
Radiation-Induced Defects in Vitreous Chalcogenide Semiconductors
a.766
Defect-Induced Transition at the Surface of Chalcopyrite Semiconductors
a.767
Anelastic Spectroscopy as a Probe for Defects in Semiconductors
a.768
HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors VVacancy-Order-Induced Optical Anisotropy in...

Vacancy-Order-Induced Optical Anisotropy in 1II1III2VI4 Compounds

Page: A764

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