Vacancy-Order-Induced Optical Anisotropy in 1II1III2VI4 Compounds
a.764
a.764
Glassy Semiconductors and Negative-U Centers
a.765
a.765
Radiation-Induced Defects in Vitreous Chalcogenide Semiconductors
a.766
a.766
Defect-Induced Transition at the Surface of Chalcopyrite Semiconductors
a.767
a.767
Anelastic Spectroscopy as a Probe for Defects in Semiconductors
a.768
a.768
Investigation of Electrically Active Defects in Semiconductor Structures
a.769
a.769
Grating Spectroscopy for Defect Analysis of Semiconductor Surfaces
a.770
a.770
Instability of a System of Primary Defects under Cascade Damage
a.771
a.771
Self-Annealing during Ion Implantation
a.772
a.772
Anelastic Spectroscopy as a Probe for Defects in Semiconductors
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