Radiation-Induced Defects in Vitreous Chalcogenide Semiconductors
a.766
a.766
Defect-Induced Transition at the Surface of Chalcopyrite Semiconductors
a.767
a.767
Anelastic Spectroscopy as a Probe for Defects in Semiconductors
a.768
a.768
Investigation of Electrically Active Defects in Semiconductor Structures
a.769
a.769
Grating Spectroscopy for Defect Analysis of Semiconductor Surfaces
a.770
a.770
Instability of a System of Primary Defects under Cascade Damage
a.771
a.771
Self-Annealing during Ion Implantation
a.772
a.772
Structural Defects in Superlattices
a.773
a.773
Interstitials Introduced by Nitridation of AIII–BV Semiconductor Surfaces
a.774
a.774
Grating Spectroscopy for Defect Analysis of Semiconductor Surfaces
Page: A770