Schwoebel-Ehrlich Barrier
a.759
a.759
Generalized Einstein Relation for Disordered Semiconductors
a.760
a.760
Controlled Impurity Diffusion in Semiconductors
a.761
a.761
Defects on III-V Semiconductor Surfaces
a.762
a.762
Evolution of Point Defects in Semiconductors
a.763
a.763
Vacancy-Order-Induced Optical Anisotropy in 1II1III2VI4 Compounds
a.764
a.764
Glassy Semiconductors and Negative-U Centers
a.765
a.765
Radiation-Induced Defects in Vitreous Chalcogenide Semiconductors
a.766
a.766
Defect-Induced Transition at the Surface of Chalcopyrite Semiconductors
a.767
a.767
Evolution of Point Defects in Semiconductors
Page: A763