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Abstracts
Migration of Self-Interstitials and the Formation of Void Lattices
a.683
Observability of Atomic Defects by Atomic Force Microscopy
a.684
Non Stoichiometry-Related Defects during Growth of Semiconductor Crystals
a.685
Evolution of Vacancy Densities in Powder Particles during Milling
a.686
Interference between Elastic-Phonon Scattering and Point Defects
a.687
Defect Characteristics and Boron-Cluster Ion-Implantation
a.688
Photoconductivity Techniques for the Defect Spectroscopy of Photovoltaics
a.689
Molecular Dynamics Study of Defects in Quenched States
a.690
Heterogeneous Void Swelling Near Grain Boundaries in Irradiated Materials
a.691
HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors VIInterference between Elastic-Phonon Scattering and...

Interference between Elastic-Phonon Scattering and Point Defects

Page: A687

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