Observability of Atomic Defects by Atomic Force Microscopy
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a.684
Non Stoichiometry-Related Defects during Growth of Semiconductor Crystals
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a.685
Evolution of Vacancy Densities in Powder Particles during Milling
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a.686
Interference between Elastic-Phonon Scattering and Point Defects
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a.687
Defect Characteristics and Boron-Cluster Ion-Implantation
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a.688
Photoconductivity Techniques for the Defect Spectroscopy of Photovoltaics
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a.689
Molecular Dynamics Study of Defects in Quenched States
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a.690
Heterogeneous Void Swelling Near Grain Boundaries in Irradiated Materials
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a.691
Semiconductors, with and without Defects, under Pressure
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a.692
Defect Characteristics and Boron-Cluster Ion-Implantation
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