Defect Characteristics and Boron-Cluster Ion-Implantation
a.688
a.688
Photoconductivity Techniques for the Defect Spectroscopy of Photovoltaics
a.689
a.689
Molecular Dynamics Study of Defects in Quenched States
a.690
a.690
Heterogeneous Void Swelling Near Grain Boundaries in Irradiated Materials
a.691
a.691
Semiconductors, with and without Defects, under Pressure
a.692
a.692
Hydrogen as a Shallow Center in Semiconductors and Oxides
a.693
a.693
Vacancies and Non-Equilibrium Grain-Boundary Segregation
a.694
a.694
Substitutional Carbon in Group-III Nitrides
a.695
a.695
Dislocation Accumulation in ULSI Cells with STI Structure
a.696
a.696
Semiconductors, with and without Defects, under Pressure
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