Semiconductors, with and without Defects, under Pressure
a.692
a.692
Hydrogen as a Shallow Center in Semiconductors and Oxides
a.693
a.693
Vacancies and Non-Equilibrium Grain-Boundary Segregation
a.694
a.694
Substitutional Carbon in Group-III Nitrides
a.695
a.695
Dislocation Accumulation in ULSI Cells with STI Structure
a.696
a.696
Nano-Defects in Nanostructures
a.697
a.697
Dislocation Motion in Icosahedral Quasicrystals at High Temperatures
a.698
a.698
Annealing of Junction Disclinations in Deformed Polycrystals
a.699
a.699
Dislocation Interfaces in Epitaxy and Crystal Plasticity
a.700
a.700
Dislocation Accumulation in ULSI Cells with STI Structure
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