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Abstracts
Molecular Dynamics Study of Defects in Quenched States
a.690
Heterogeneous Void Swelling Near Grain Boundaries in Irradiated Materials
a.691
Semiconductors, with and without Defects, under Pressure
a.692
Hydrogen as a Shallow Center in Semiconductors and Oxides
a.693
Vacancies and Non-Equilibrium Grain-Boundary Segregation
a.694
Substitutional Carbon in Group-III Nitrides
a.695
Dislocation Accumulation in ULSI Cells with STI Structure
a.696
Nano-Defects in Nanostructures
a.697
Dislocation Motion in Icosahedral Quasicrystals at High Temperatures
a.698
HomeDefect and Diffusion ForumDefects and Diffusion in Semiconductors VIVacancies and Non-Equilibrium Grain-Boundary...

Vacancies and Non-Equilibrium Grain-Boundary Segregation

Page: A694

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