Heterogeneous Void Swelling Near Grain Boundaries in Irradiated Materials
a.691
a.691
Semiconductors, with and without Defects, under Pressure
a.692
a.692
Hydrogen as a Shallow Center in Semiconductors and Oxides
a.693
a.693
Vacancies and Non-Equilibrium Grain-Boundary Segregation
a.694
a.694
Substitutional Carbon in Group-III Nitrides
a.695
a.695
Dislocation Accumulation in ULSI Cells with STI Structure
a.696
a.696
Nano-Defects in Nanostructures
a.697
a.697
Dislocation Motion in Icosahedral Quasicrystals at High Temperatures
a.698
a.698
Annealing of Junction Disclinations in Deformed Polycrystals
a.699
a.699
Substitutional Carbon in Group-III Nitrides
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