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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 237-240Iridium Diffusion into Silicon Wafers as a Means...

Iridium Diffusion into Silicon Wafers as a Means to Determine Silicon Vacancy Concentrations

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Diffusion in Materials - DIMAT2004

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Periodical:

Defect and Diffusion Forum (Volumes 237-240)

Pages:

328-333

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.237-240.328

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Online since:

April 2005

Authors:

Ludmila Lerner, Nicolaas Stolwijk

Keywords:

Dissociative Mechanism, Iridium Diffusion, Kick-Out Mechanism, Neutron Activation Analysis, Silicon, Vacancy Concentration

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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