Iridium Diffusion into Silicon Wafers as a Means to Determine Silicon Vacancy Concentrations

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Periodical:

Defect and Diffusion Forum (Volumes 237-240)

Edited by:

M. Danielewski, R. Filipek, R. Kozubski, W. Kucza, P. Zieba, Z. Zurek

Pages:

328-333

DOI:

10.4028/www.scientific.net/DDF.237-240.328

Citation:

L. Lerner and N. Stolwijk, "Iridium Diffusion into Silicon Wafers as a Means to Determine Silicon Vacancy Concentrations", Defect and Diffusion Forum, Vols. 237-240, pp. 328-333, 2005

Online since:

April 2005

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$35.00

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