Influence of Concentration Dependences of Diffusion upon Dopant Dynamics
a.581
a.581
Measuring the Continuity of Diffusion Barriers on Porous Films
a.582
a.582
Numerical Computation of Surface Diffusion
a.583
a.583
Photo-Induced Cation Interstitial Diffusion in II–VI Semiconductors
a.584
a.584
Quasielastic and Low Vibrational Lineshapes in Atom–Surface Diffusion
a.585
a.585
Surface Diffusion during Molecular-Beam Epitaxy of III-V Compounds
a.586
a.586
Three-Dimensional Steady-State Constant-Source Diffusion
a.587
a.587
Tuning Diffusion and Friction in Microscopic Contacts
a.588
a.588
Anion Vacancies and Photoconductivity in Semiconductors
a.589
a.589
Quasielastic and Low Vibrational Lineshapes in Atom–Surface Diffusion
Page: A585