Measuring the Continuity of Diffusion Barriers on Porous Films
a.582
a.582
Numerical Computation of Surface Diffusion
a.583
a.583
Photo-Induced Cation Interstitial Diffusion in II–VI Semiconductors
a.584
a.584
Quasielastic and Low Vibrational Lineshapes in Atom–Surface Diffusion
a.585
a.585
Surface Diffusion during Molecular-Beam Epitaxy of III-V Compounds
a.586
a.586
Three-Dimensional Steady-State Constant-Source Diffusion
a.587
a.587
Tuning Diffusion and Friction in Microscopic Contacts
a.588
a.588
Anion Vacancies and Photoconductivity in Semiconductors
a.589
a.589
Born and Lindemann Criteria and the Role of Interstitial Defects
a.590
a.590
Surface Diffusion during Molecular-Beam Epitaxy of III-V Compounds
Page: A586