Surface Diffusion during Molecular-Beam Epitaxy of III-V Compounds
a.586
a.586
Three-Dimensional Steady-State Constant-Source Diffusion
a.587
a.587
Tuning Diffusion and Friction in Microscopic Contacts
a.588
a.588
Anion Vacancies and Photoconductivity in Semiconductors
a.589
a.589
Born and Lindemann Criteria and the Role of Interstitial Defects
a.590
a.590
Compensation, Defects and Ferromagnetism in Dilute Semiconductors
a.591
a.591
Defect–Deformation Model of Surface Roughness Formation
a.592
a.592
New Type of Charged Defect in Amorphous Chalcogenides
a.593
a.593
Optimizing Boron Junctions by Point Defect and Stress Engineering
a.594
a.594
Born and Lindemann Criteria and the Role of Interstitial Defects
Page: A590