Born and Lindemann Criteria and the Role of Interstitial Defects
a.590
a.590
Compensation, Defects and Ferromagnetism in Dilute Semiconductors
a.591
a.591
Defect–Deformation Model of Surface Roughness Formation
a.592
a.592
New Type of Charged Defect in Amorphous Chalcogenides
a.593
a.593
Optimizing Boron Junctions by Point Defect and Stress Engineering
a.594
a.594
Semiconductor Diodes Made of High Defect Concentration Material
a.595
a.595
Ultra-Shallow Junction Formation by Point Defect Engineering
a.596
a.596
Ambiguities in the Calculation of Dislocation Self Energies
a.597
a.597
Dislocation Cell Structures in Melt-Grown Semiconductor Crystals
a.598
a.598
Optimizing Boron Junctions by Point Defect and Stress Engineering
Page: A594