Compensation, Defects and Ferromagnetism in Dilute Semiconductors
a.591
a.591
Defect–Deformation Model of Surface Roughness Formation
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a.592
New Type of Charged Defect in Amorphous Chalcogenides
a.593
a.593
Optimizing Boron Junctions by Point Defect and Stress Engineering
a.594
a.594
Semiconductor Diodes Made of High Defect Concentration Material
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a.595
Ultra-Shallow Junction Formation by Point Defect Engineering
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a.596
Ambiguities in the Calculation of Dislocation Self Energies
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a.597
Dislocation Cell Structures in Melt-Grown Semiconductor Crystals
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a.598
Dislocation Core Parameters
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a.599
Semiconductor Diodes Made of High Defect Concentration Material
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