Effect of a Third Element on the Stability of NiSi Thin Films on Si

Dominique Mangelinck

doi:10.4028/www.scientific.net/DDF.249.127

Paper Titles

Mathematical Modeling of Solid-State Diffusion during Mechanical Alloying
p.105

The Magneto-Plastic Effect at Beryllium Bronze after Aging in the Constant Magnetic Field
p.111

Determination of Copper Self-Diffusion Coefficients on the Base of High-Temperature Creep Data
p.115

Diffusion under Large Driving Forces
p.119

Effect of a Third Element on the Stability of NiSi Thin Films on Si
p.127

Dopant Diffusion in Si_1-xGe_x Thin Films: Effect of Epitaxial Stress
p.135

Characteristics of Hydrogen Sorption, Solubility and Diffusivity in Graphites and Carbon Nanomaterials: Relevance to the On-Board Storage Problem
p.143

Diffusion of Cr in Nanostructured Fe and Low Carbon Steel Produced by Means of Surface Mechanical Attrition Treatment
p.147

Hardness of Nanostructured Al-Zn, Al-Mg and Al-Zn-Mg Alloys Obtained by High-Pressure Torsion
p.155

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 249Effect of a Third Element on the Stability of NiSi...

Effect of a Third Element on the Stability of NiSi Thin Films on Si

Abstract:

The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film increases the disilicide nucleation temperature to 900oC leading to a better stability of NiSi at high temperatures. For Ni films on Si1-xGex with x=0.29 and 0.58, no NiSi2 was found after annealing at 850°C. The increase in thermal stability of NiSi has been explained in terms of nucleation concept. Calculated ternary phase diagrams allow to understand the effect of the third element (Pt or Ge) on the driving force for nucleation. The redistribution of this element can also be explained with the ternary phase diagrams.