Self- and Impurity Diffusion in γ-TiAl Single Crystals

Abstract:

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The diffusion coefficients of 44Ti, 63Ni and 59Fe in γ-TiAl single crystals have been measured by ion-beam sputter-sectioning technique, while those of In have been measured using ion implantation technique and secondary ion mass spectroscopy (SIMS) in order to clarify the diffusion anisotropy: the diffusion perpendicular and parallel to the [001] axis. The diffusion of Ti and In perpendicular to the [001] axis is faster than that parallel to the [001] axis. However, the diffusion anisotropies of Fe and Ni show opposite trend to those of Ti and In, namely the diffusion parallel to the [001] axis is faster than that perpendicular to the axis. The predominant process of diffusion perpendicular to the [001] axis has been discussed from a viewpoint of activation energy using the expression of the diffusion coefficients in L10-ordered alloys.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 258-260)

Edited by:

Andreas Öchsner and José Grácio

Pages:

259-269

DOI:

10.4028/www.scientific.net/DDF.258-260.259

Citation:

H. Nakajima et al., "Self- and Impurity Diffusion in γ-TiAl Single Crystals", Defect and Diffusion Forum, Vols. 258-260, pp. 259-269, 2006

Online since:

October 2006

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Price:

$35.00

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