Abstract: Solid state reactions between amorpous Si and crystalline Co have been investigated by
synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of
a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat
treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first
the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523
and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65
while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573
and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already
existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These
results, together with the results of resistance kinetics measurements, in similar multilayered as well
as bi-layered samples at similar temperatures, providing similar exponents will be presented.
Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was
recently published for the interpretation of solid state reactions with non-parabolic kinetics on the
nanoscale) will be discussed.
Abstract: The kinetics of growth and lateral spreading of intermetallic layers during surface
interdiffusion in Cu – Sn system has been studied in a temperature range 160 – 200oC by the
methods of optical microscopy, SEM provided with X-ray microprobe, and AFM. Lateral phase
spreading over the surface is characterized by competition between two phases: Cu6Sn5 and Cu3Sn.
A steady state solution for concentration distribution on the surface of growing intermetallic
phases, as well as kinetic equations of lateral spreading of growing phase layers have been
obtained. By comparison of experimental data on intermetallic growth kinetics with the proposed
theory, the dynamic surface diffusion coefficients have been calculated.
Abstract: A theoretical and atomistic study of diffusion and stability of a pure element hollow nanosphere
and nanotube is performed. The shrinkage via the vacancy mechanism of these hollow nano-objects is
described analytically. Using Gibbs-Thomson boundary conditions an exact solution of the kinetic
equation in quasi steady-state at the linear approximation is obtained. The collapse time as a function of
the geometrical sizes of the hollow nano-objects is determined. Kinetic Monte Carlo simulation of the
shrinkage of these nano-objects is performed: it confirms the predictions of the analytical analysis. Next,
molecular dynamics simulation in combination with the embedded atom method is used to investigate
diffusion by the vacancy mechanism in a Pd hollow nanosphere and nanotube. It is found that the diffusion
coefficient in a Pd hollow nanosphere and nanotube is larger near the inner and external surfaces compared
with the middle part of a nanoshell. The molecular dynamics results provide quite a strong but indirect
argument that a real pure element hollow nanosphere and nanotube may not shrink as readily via the vacancy
mechanism as compared with the predictions of the analytical analysis and kinetic Monte Carlo simulations.
Abstract: Epitaxial, coherent Mo/V multilayers were deposited by magnetron sputtering on (001)
oriented MgO substrates at 873K (sample MoV-T), 923K (sample MoV-U) and 973K (sample
MoV-V), respectively. In order to estimate the concentration profiles in our multilayers, a
superlattice refinement modelling procedure has been used on high-angle XRD symmetric scans.
The Mo/V interfaces were always sharper than V/Mo ones (in this notation the order of element
reflects the sequence of deposition: e.g. the Mo/V interface was formed by the deposition of the V
on the Mo surface). Furthermore the interface diffuseness was only slightly different at the lowest
substrate temperature, but the difference increased with increasing temperature and an abrupt
concentration jump could be observed at the Mo/V interface in the sample, sputtered at the 973 K.
This indicates that during deposition the interfacial mixing by impact exchange events is important
and thermally activated processes (surface diffusion and/or jumps driven by segregation) are less
effective. With increasing substrate temperature the thickness of the V/Mo interfaces were
unchanged while the Mo/V interface became shaper and sharper i.e. thermally activated jumps were
more active during deposition of V atoms. Thus in forming Mo/V interfaces the segregation
tendency of V to the Mo surface results in enhanced exchanges between V atoms (buried in the near
surface layers of the Mo substrate) and surface Mo atoms, leading to more sharper interface with
increasing temperature. On the other hand during the formation of the V/Mo interfaces the chemical
thickness of the interface, provided again by impact exchanges, was practically unchanged.
Abstract: The diffusion saturation of (α + β) titanium alloy by nitrogen under rarefied medium
taking into account the peculiarities of interaction both at the interface and in the metal core is
modeled. The corresponding diffusion problem using the diffusion equations in the medium
consisting two families of diffusion paths and non-stationary boundary condition at interface is
analytically solved. The effect of the temperature and time parameters, volumetric quantity of β-
phase on the kinetics of nitriding is estimated. It is established that with the increase of isothermal
exposure temperature and quantity of β-phase the surface saturation by nitrogen decreases. It is
caused by more intensive nitrogen penetration into bulk and formation of a deeper diffusion zone.
Abstract: The suppression criterion of the binary phase growth due to addition of a third component
is considered. In this case the analysis of the two possible criteria of the first phase growth are
considered: first – kinetic criterion based on the balance of components fluxes and second -
thermodynamic criterion which is based on the maximal rate of the entropy production principle.
We demonstrate that in the case of a model system the thermodynamic criterion lead to a bigger
value of the critical thickness of the phases which are suppressed by the growth of the investigated
Abstract: Lateral growth of intermediate phase during reactive diffusion was analyzed. Proposed
model is based on the assumption that the main driving force of the lateral growth process is the
chemical one (proportional to composition gradient along the interface). Asymmetric case of phase
formation taking into account the curvature of all three interfaces at the triple joint is considered.