ZnSe: Twins
a.283
a.283
ZnTe: Twins
a.284
a.284
Negative Donors in Multivalley Semiconductors
a.285
a.285
Exchange between Deep Donors in Semiconductors
a.286
a.286
Charged Step Defect on a Semiconductor Surface
a.287
a.287
Energy and Concentration of Amphoteric Defects
a.288
a.288
Generation-Recombination Properties of Bistable Defects
a.289
a.289
Computationally Efficient Approach to Boron-Interstitial Clustering
a.290
a.290
Statistically Inhomogeneous Distributions of Threading Dislocations
a.291
a.291
Charged Step Defect on a Semiconductor Surface
Page: A287