Abstracts

Exchange between Deep Donors in Semiconductors
a.286

Charged Step Defect on a Semiconductor Surface
a.287

Energy and Concentration of Amphoteric Defects
a.288

Generation-Recombination Properties of Bistable Defects
a.289

Computationally Efficient Approach to Boron-Interstitial Clustering
a.290

Statistically Inhomogeneous Distributions of Threading Dislocations
a.291

Reconstruction Energies of Partial Dislocations in Cubic Semiconductors
a.292

Dislocation Density Asymmetries in Heteroepitaxial Semiconductors
a.293

Interatomic Potential Calculations of III(Al,In)-N Planar Defects
a.294

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Computationally Efficient Approach to Boron-Interstitial Clustering

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