ZnTe: Twins
a.284
a.284
Negative Donors in Multivalley Semiconductors
a.285
a.285
Exchange between Deep Donors in Semiconductors
a.286
a.286
Charged Step Defect on a Semiconductor Surface
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a.287
Energy and Concentration of Amphoteric Defects
a.288
a.288
Generation-Recombination Properties of Bistable Defects
a.289
a.289
Computationally Efficient Approach to Boron-Interstitial Clustering
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Statistically Inhomogeneous Distributions of Threading Dislocations
a.291
a.291
Reconstruction Energies of Partial Dislocations in Cubic Semiconductors
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a.292
Energy and Concentration of Amphoteric Defects
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