Abstracts

Charged Step Defect on a Semiconductor Surface
a.287

Energy and Concentration of Amphoteric Defects
a.288

Generation-Recombination Properties of Bistable Defects
a.289

Computationally Efficient Approach to Boron-Interstitial Clustering
a.290

Statistically Inhomogeneous Distributions of Threading Dislocations
a.291

Reconstruction Energies of Partial Dislocations in Cubic Semiconductors
a.292

Dislocation Density Asymmetries in Heteroepitaxial Semiconductors
a.293

Interatomic Potential Calculations of III(Al,In)-N Planar Defects
a.294

Stacking Fault Formation in Semiconductors
a.295

HomeDefect and Diffusion ForumDefects and Diffusion in Semicondutors, 2009Statistically Inhomogeneous Distributions of...

Statistically Inhomogeneous Distributions of Threading Dislocations

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