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Abstracts
Charged Step Defect on a Semiconductor Surface
a.287
Energy and Concentration of Amphoteric Defects
a.288
Generation-Recombination Properties of Bistable Defects
a.289
Computationally Efficient Approach to Boron-Interstitial Clustering
a.290
Statistically Inhomogeneous Distributions of Threading Dislocations
a.291
Reconstruction Energies of Partial Dislocations in Cubic Semiconductors
a.292
Dislocation Density Asymmetries in Heteroepitaxial Semiconductors
a.293
Interatomic Potential Calculations of III(Al,In)-N Planar Defects
a.294
Stacking Fault Formation in Semiconductors
a.295
HomeDefect and Diffusion ForumDefects and Diffusion in Semicondutors, 2009Stacking Fault Formation in Semiconductors

Stacking Fault Formation in Semiconductors

Page: A295

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