Diffusion and Redistribution of Boron in Nickel Silicides

Abstract:

The Diffusion and Solubility of B Implanted in δ-Ni₂Si and Nisi Layers Is Studied by SIMS. it Is Observed that both Diffusion and Solubility Are Higher in δ-Ni₂Si than Nisi. the Redistribution of B during Ni Silicidation Is Also Studied. the SIMS Profiles Show the Presence of Concentration Step in the Middle of the Final Nisi Layer. this Profile Shape Is Explained in Light of the Results Obtained in Preformed Silicides. the Proposed Model Is Supported by Redistribution Simulations that Can Reproduce the Main Features of the Profile.

• Periodical: Defect and Diffusion Forum (Volumes 323-325)
• Pages: 415-420
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.323-325.415
• Online since: April 2012
• Authors: Ivan Blum, Alain Portavoce, Lee Chow, Khalid Hoummada, Dominique Mangelinck
• Keywords: Boron, Diffusion, Nickel Silicide, Redistribution, Solubility

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