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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 323-325Reactive Diffusion of Thin Si Deposits into Ni...

Reactive Diffusion of Thin Si Deposits into Ni (111)

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Abstract:

Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and scanning tunnelling microscopy (STM) were used to study the reactive diffusion of one monolayer of silicon deposited at room temperature onto a Ni (111) substrate. We have done isochronal and isothermal kinetics by AES, and we observed in both cases a kinetics blockage on a plateau corresponding to around one third of a silicon monolayer. STM images and LEED patterns both recorded at room temperature just after annealing, reveal formation of an ordered hexagonal superstructure corresponding probably to a two-dimensional surface silicide.

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Diffusion in Materials - DIMAT 2011

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Periodical:

Defect and Diffusion Forum (Volumes 323-325)

Pages:

421-426

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.323-325.421

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Online since:

April 2012

Authors:

B. Lalmi, C. Girardeaux, Alain Portavoce, Bernard Aufray, Jean Bernardini

Keywords:

AES, Diffusion, LEED, Nickel Silicide, Reaction, STM

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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