Diffusion in Binary and Pseudo-Binary L12 Indides, Stannides, Gallides and Aluminides of Rare-Earth Elements as Studied Using Perturbed Angular Correlation of 111In/Cd

Randal L. Newhouse; Justine Minish; Gary Scott Collins

doi:10.4028/www.scientific.net/DDF.323-325.447

Paper Titles

Reactive Diffusion of Thin Si Deposits into Ni (111)
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From Contact to Diffusion Controlled Growth of Nickel Silicides in Silicon Nanowires
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Nanometric-Size Effect upon Diffusion and Reaction in Semiconductors: Experimental and Theoretical Investigations
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Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate
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Diffusion in Binary and Pseudo-Binary L1₂ Indides, Stannides, Gallides and Aluminides of Rare-Earth Elements as Studied Using Perturbed Angular Correlation of ¹¹¹In/Cd
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Diffusion in La_nCoIn_3n+2 Phases Studied by Perturbed Angular Correlation
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Diffusion Mechanism in XSi₂ and X₅Si₃ (X= Nb, Mo, V) Phases
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Growth Kinetics of Intermetallic Phases in Transient Liquid Phase Bonding Process (TLPB) in Al /Ni System
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Nitrogen Diffusion at Low Temperature in fcc Materials Deformed by Attrition Peening
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Diffusion in Binary and Pseudo-Binary L1₂ Indides, Stannides, Gallides and Aluminides of Rare-Earth Elements as Studied Using Perturbed Angular Correlation of ¹¹¹In/Cd

Abstract:

Diffusional jumps can produce fluctuating electric field gradients at nuclei of jumping atoms. Using perturbed angular correlation of gamma rays (PAC), jumps of probe atoms cause nuclear quadrupole relaxation that can be fitted to obtain the mean jump frequency. An overview is given of the application of this approach to highly ordered intermetallic compounds having the L1₂ (Cu₃Au) crystal structure. New results are then presented for jump frequencies of ¹¹¹In/Cd probe atoms in pseudo-binary L1₂ compounds of the forms In₃(La_1-xPr_x) and (In_1-xSn_x)₃La. For the mixed rare-earth system, jump frequencies are found to scale with composition between jump frequencies of the end-member phases In₃La and In₃Pr. However, for the mixed sp-element system, a large decrease in jump frequency is observed as Sn atoms substitute for In-atoms. This difference in behavior appears to depend on whether atomic disorder is on the diffusion sublattice (In-Sn substitution), as opposed to a neighboring sublattice (La-Pr substitution), whether or not there is a difference in diffusion mechanism between end-member phases, and/or whether or not there is a valence difference between the mixing atoms. All three conditions apply for only (In_1-xSn_x)₃La.