Diffusion Mechanism in XSi₂ and X₅Si₃ (X= Nb, Mo, V) Phases

Abstract:

In view of the importance of the silicides in the high temperature applications, the diffusion behaviour is compared in different systems for two types of silicides, XSi₂ and X₅Si₃ (X=Nb, Mo, V). Atomic mechanism of diffusion and defects present in the structure are discussed. In both the phases, Si has faster diffusion rate than the metal species. This is expected from the nearest neighbour (NN) bonds present in the XSi₂ phase but rather unusual in the X₅Si₃ phase. Relative mobilities of the species calculated indicate the presence of high concentration of Si antisites. Moreover, the concentration of the defects is different in different systems to find different diffusion rates.

• Periodical: Defect and Diffusion Forum (Volumes 323-325)
• Pages: 459-464
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.323-325.459
• Online since: April 2012
• Authors: Soma Prasad, Aloke Paul
• Keywords: Defect, Interdiffusion, Silicide

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