Radiation Damaging of 3C-SiC Lattice: Computer Simulation of Brownian Motion of Non-Point Defects

Abstract:

The formation of porosity in thin layers of coating under its processing using the flux of high energy Xe⁺⁺ is happen under the physical processes of nucleation of gaseous defects. The process is described by kinetic equations of Kolmogorov-Feller and Einstein-Smolukhovskii. The initial stage of the phase transition is considered as the superposition of two random processes: clustering of defects and their brownian motion. In the paper, we showthat a damaging phenomenon in layers can be predicted by means of computer experiments. The kinetic distribution function (DF) of defects depends on sizes and depth their penetration into materials under irradiation. Computer simulation of DF allows analysing the porosity and elastic stresses in bilayer caused by Xe⁺⁺ blistering. The structures of defects are accumulated in SiC layer due to phase transition as well as a result the action perturbation of elastic forces in thin layers.

• Periodical: Defect and Diffusion Forum (Volume 353)
• Pages: 148-152
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.353.148
• Online since: May 2014
• Authors: Galina I. Zmievskaya*, A.L. Bondareva, Vl.V. Savchenko
• Keywords: Brownian Motion, Fluctuation Stage of First Order Phase Transition, Kinetic Theory, Porosity, Radiation Damaging, Silicon Carbide (SiC), Stochastic Method, Stress

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