Ga Penetration along the Grain Boundaries of Aluminum Alloys

Kseniia Kovaleva; Anastasiia Karpushkina; Gleb Litvinenko; Tatiana Popova; Alexey O. Rodin

doi:10.4028/www.scientific.net/DDF.363.133

Paper Titles

General Approach to Diffusion under a Stress in Metals and Interstitial Alloys
p.112

Numerical Modelling of Heterodiffusion from the Variable Type Source
p.120

Diffusion Controlled Grain Boundary and Triple Junction Wetting in Polycrystalline Solid Metal
p.127

Ni Grain Boundary Diffusion in Cu-Co Alloys
p.130

Ga Penetration along the Grain Boundaries of Aluminum Alloys
p.133

Ti and Ni Grain Boundary Diffusion in B2 NiTi Compound
p.137

The Model of the Layer Boundary Diffusion in Multilayer Materials
p.142

MD Simulation of Ionic Crystal under Strong Gravitational Field
p.151

Crystallization and Reconstructive Layer Transformation of a-Si/Au Multilayer Thin Films under a Strong Gravitational Field
p.156

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Ga Penetration along the Grain Boundaries of Aluminum Alloys

Abstract:

The Ga penetration process along grain boundaries of Al-based alloys while they are in contact with Ga containing aqueous solution was studied. It was shown that exposure in the solution at room temperature leads to the liquid Ga penetration process, which started with 3 minutes delay. The penetration rate for Al-4.7 % Zn (13 μm/s) is two times less than penetration rate in pure Al. As for Al-Cu alloys it was shown that penetration process occurs only for the alloys with 1.6 % Cu and less, but for larger value of Cu concentration Ga did not penetrate in Al. Comparison of the effect with pure Ga spreading over the alloys surface showed that the absence of penetration connected with absence of wetting.