Study of Defects in High Energy Ion Implanted ZnO Crystals

Oksana Melikhova; Jakub Čížek; Ivan Procházka; Petr Hruška; Wolfgang Anwand; Vladimír Havránek; Vladimir A. Skuratov; Tatiana S. Strukova

doi:10.4028/www.scientific.net/DDF.373.193

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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 373Study of Defects in High Energy Ion Implanted ZnO...

Study of Defects in High Energy Ion Implanted ZnO Crystals

Abstract:

Positron annihilation spectroscopy (PAS) was employed for characterization of defects in the hydrothermally (HT) grown zinc oxide single crystals irradiated by high energy ions. Defects created in ZnO crystals by 2.5 MeV protons, 7.5 MeV N³⁺ and 167 MeV Xe²⁶⁺ ions were compared. The virgin ZnO crystals contain Zn-vacancies associated with hydrogen. Ion implantation introduced additional defects, namely Zn+O di-vacancies in crystals irradiated by protons and small vacancy clusters in samples implanted by N and Xe ions.

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Periodical:

Defect and Diffusion Forum (Volume 373)

Pages:

193-196

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.373.193

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Online since:

March 2017

Authors:

Oksana Melikhova*, Jakub Čížek, Ivan Procházka, Petr Hruška, Wolfgang Anwand, Vladimír Havránek, Vladimir A. Skuratov, Tatiana S. Strukova

Keywords:

Ion Implantation, Radiation Induced Defects, Zinc Oxide

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