Effect of TiO2 Doping on Microdefects and Electrical Properties of ZnO-Based Varistors

Zheng Ying Chen; Mei Yu Li; Yan Wan; Li Fang Han; Yu Yang Huang; Wen Deng

doi:10.4028/www.scientific.net/DDF.373.197

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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 373Effect of TiO2 Doping on Microdefects and...

Effect of TiO₂ Doping on Microdefects and Electrical Properties of ZnO-Based Varistors

Abstract:

Positron lifetime spectrum and electrical property measurements were performed on ZnO-based ceramics doped with different contents of TiO₂. For ZnO-based ceramics with TiO₂ content less than 1.8 mol%, the mean positron lifetime of the ZnO-based ceramic decreases with increasing in TiO₂ content, and reaches a minimum value at 1.8 mol% TiO₂. As the TiO₂ content higher than 1.8 mol%, the mean positron lifetime increases with TiO₂ content. The ZnO-based varistor with 1.8 mol% TiO₂ exhibites an optimized varistor property; it has a relatively low leakage current I_L, a relatively low breakdown voltage V_B, and a relatively high nonlinear coefficient α. The effects of TiO₂ doping on microdefects and electrical properties of ZnO-based varistors were discussed.

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Periodical:

Defect and Diffusion Forum (Volume 373)

Pages:

197-200

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.373.197

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Online since:

March 2017

Authors:

Zheng Ying Chen, Mei Yu Li, Yan Wan, Li Fang Han, Yu Yang Huang, Wen Deng*

Keywords:

Contents of TiO₂, Electrical Property, Microdefect, ZnO-Based Varistor

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