Modulation of the Dielectric Properties of CaCu3Ti4O12 System with Gd-Substitution

Zhen Ping Chen; Hui Fang He; Tao Li; Hai Yang Dai; Zhi Quan Chen

doi:10.4028/www.scientific.net/DDF.373.213

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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 373Modulation of the Dielectric Properties of...

Modulation of the Dielectric Properties of CaCu₃Ti₄O₁₂ System with Gd-Substitution

Abstract:

To specify the effects of modulating mechanism of Gd substitution on the dielectric properties for Ca_1-_xGd_xCu₃Ti₄O₁₂ system, the XRD, SEM and positron positron annihilation technique have been implemented. The results display that both grain size and vacancy-type defect concentration play important roles in controlling the dielectric properties of CaCu₃Ti₄O₁₂. The dielectric properties are improved by adding an appropriate amount of Gd additives (x=0.01) but weakened by higher Gd doping content since this is closely related to the grain size and concentration of vacancy-type defect in the samples.

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Periodical:

Defect and Diffusion Forum (Volume 373)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.373.213

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Online since:

March 2017

Authors:

Zhen Ping Chen*, Hui Fang He, Tao Li, Hai Yang Dai, Zhi Quan Chen

Keywords:

Dielectric Properties, Positron Annihilation, Vacancy-Type Defect

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