Effect of Annealing Process on the Photoelectric Properties and Microstructure of Sulfur-Hyperdoped Silicon

Abstract:

The material of sulfur-hyperdoped silicon was prepared by ion implantation and then annealed by heat treating furnace and pulse laser respectively. The effects of annealing process on the absorption, raman shift, carrier concentration and mobility ratio of this material were researched. Furthermore, the doppler broadening spectrum of crystal silicon substrate and sulfur-hyperdoped silicon before and after annealing was presented by using a slow positron technique. And the relationship between the microstructure and photoelectric properties of the material was explored. The experimental results indicate that the absorption and carrier concentration of the sulfur-hyperdoped silicon annealed by pulse laser were higher than that of the samples annealed by heat treating furnace. And the doppler broadening spectrum shows that the photoelectric properties of this material were closely related to the defects in the material.

• Periodical: Defect and Diffusion Forum (Volume 373)
• Pages: 217-220
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.373.217
• Online since: March 2017
• Authors: De Wei Liu, Tao Li, Hai Yang Dai, Ren Zhong Xue, Zhen Ping Chen*, Xing Zhong Cao, Bao Yi Wang
• Keywords: Defect Characteristics, Ion Implantation, Photoelectric Properties, Position Annihilation, Sulfur-Hyperdoped Silicon

References

[1] M. A. Green and M. J. Keevers, Optical-properties of intrinsic silicon at 300K, Progress in Photovoltaics 3 (1995) 189-192.

[2] P. G. Maloney, P. Smith, V. King, C. Billman, M. Winkler and E. Mazur, Emissivity of microstructured silicon, Applied Optics 49 (2010) 1065-1068.

DOI: 10.1364/ao.49.001065

[3] P. Saring, A. L. Baumann, B. S. Ludewig, S. Kontermann, W. Schade, M. Seibt, Electronic and structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions, Applied Physics Letters 103 (2013) 061904.

DOI: 10.1063/1.4817726

[4] M. J. Sher, M. T. Winkler, E. Mazur, Pulsed-laser hyperdoping and surface texturing for photovoltaics, Materials Research Society Bulletin 36 (2011) 439-445.

DOI: 10.1557/mrs.2011.111

[5] K. F. Wang, S. C. Qu, D. W. Liu, K. Liu, J. Wang, L. Zhao, H. L. Zhu, Z. G. Wang, Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures, Materials Letters 107 (2013) 50-52.

DOI: 10.1016/j.matlet.2013.05.123

[6] B. P. Bob, A. Kohno, S. Charnvanichborikarn, J. M. Warrender, I. Umezu, M. Tabbal, J. S. Williams, Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting, Journal of Applied Physics 107 (2010).

DOI: 10.1063/1.3415544

[7] P. D. Persans, N. E. Berry, D. Recht, D. Hutchinson, H. Peterson, J. Clark, S. Charnvanichborikarn, J. S. Williams, A. DiFranzo, M. J. Aziz, Photocarrier lifetime and transport in silicon supersaturated with sulfur, Applied Physics Letters 101 (2012).

DOI: 10.1063/1.4746752