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Zn-Vacancy Related Defects Identified in ZnO Films Grown by Pulsed Laser Deposition

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Abstract:

Undoped and Cu-doped ZnO grown on sapphire using pulsed laser deposition (PLD) were studied by positron annihilation spectroscopy (PAS), photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM) and secondary ion mass spectroscopy (SIMS). In the undoped samples, two kinds of VZn-related defects, namely VZn1 and VZn2 are identified. VZn1 was identified in as-grown samples grown at relatively low substrate (~300 °C). After annealing at 900 °C, VZn-2, the green luminescence (GL) peaking at 2.47 eV and the near band edge (NBE) emission at 3.23 eV in the low temperature photoluminescence (LT-PL) were simultaneously introduced. Another kind of VZn-related defect is identified in the Cu-doped ZnO sample, and is tentatively assigned to the VZn decorated with the Cu.

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Info:

Periodical:

Defect and Diffusion Forum (Volume 373)

Pages:

227-230

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.373.227

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Online since:

March 2017

Authors:

Francis Chi Chung Ling*, Zi Lan Wang, Cai Qin Luo, Wolfgang Anwand, Andreas Wagner

Keywords:

Green Luminescence, Near Band Edge Emission, Photoluminescence, Positron Annihilation Spectroscopy, Pulsed Laser Deposition, Zinc Oxide, Zn-Vacancy

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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