Positron Annihilation in TaN Thin Sputtering Films Prepared with Various N2 Partial Pressures

Jian Dang Liu; Bing Chuan Gu; Jia Jie Fang; Bang Jiao Ye

doi:10.4028/www.scientific.net/DDF.373.237

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Positron Annihilation in TaN Thin Sputtering Films Prepared with Various N₂ Partial Pressures

Abstract:

Tantalum nitride (TaN) thin films were deposited using magnetron sputtering method under different N₂/Ar ratio condition. Slow positron beam was used to analyze the microstructure of those films. The results show that the films which deposited at low N₂/Ar flow ratio contain more vacancy-like defects, and the corresponding S parameter is relatively large. The sheet resistance measurement displays that ohms-per-square greatly increase with increased N₂/Ar ratio. And the reasons could be related to nonstoichiometry-induced vacancies and lattice distortions.

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Periodical:

Defect and Diffusion Forum (Volume 373)

Pages:

237-240

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.373.237

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Online since:

March 2017

Authors:

Jian Dang Liu*, Bing Chuan Gu, Jia Jie Fang, Bang Jiao Ye

Keywords:

Slow Positron Beam, TaN, Thin Films

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