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Preface
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Interdiffusion, Reactions, and Phase Transformations Observed during Fabrication of Low Enriched Uranium Monolithic Fuel System for Research and Test Reactors
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Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe
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Redistribution of Metallic Impurities in Si during Annealing and Oxidation: W and Fe

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Abstract:

Atomic redistribution of W and Fe in Si were studied using secondary ion mass spectrometry and transmission electron microscopy. W diffusion experiments performed during isothermal annealing and during Si oxidation show that W atoms should use at least two different diffusion mechanisms. Experimental diffusion profiles can be well simulated by considering the simultaneous use of three different W diffusion mechanisms: the dissociative and the kick-out mechanisms, as well as an original mechanism based on the formation of a W-Si self-interstitial pair located on the interstitial Si sub-lattice. Fe redistribution was studied during the oxidation of a Fe-contaminated Si wafer. Fe is shown to be first pushed-out in Si by the mobile SiO2/Si interface, and thus to form Fe silicides precipitates at this interface. The silicide precipitates, which can exhibit a core-shell structure, appear to move with the SiO2/Si interface thanks to an oxidation/dissolution mechanism in the SiO2 and a nucleation/growth mechanism in the Si matrix. Furthermore, the rate difference between Si and Fe silicide precipitate oxidation leads to the formation of Si pyramidal defects at the SiO2/Si interface.

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Diffusion in Materials DIMAT-2017 View Preview

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Periodical:

Defect and Diffusion Forum (Volume 383)

Pages:

17-22

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https://doi.org/10.4028/www.scientific.net/DDF.383.17

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Online since:

February 2018

Authors:

Alain Portavoce*, Anthony De Luca, Nelly Burle, Michaël Texier

Keywords:

Diffusion, Iron, Oxidation, Silicon, Tungsten

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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