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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 386The Lateral Photovoltaic Effect in the Fe/SiO2/ Si...

The Lateral Photovoltaic Effect in the Fe/SiO₂/ Si Structure with Different Silicon Conductivity Type

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Abstract:

We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO₂/Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO₂/n-Si and Fe/SiO₂/р-Si structures is 32.3 and 14.7 mV/mm, respectively. When the silicon conductivity type changes, there is an inversion of photovoltage polarity as a result of the opposite direction of the built-in electrical field at the SiO₂/Si interface. It was found that the response time in the Fe/SiO₂/n-Si structure is 4.2 times faster than in the Fe/SiO₂/p-Si structure due to the presence of an inversion layer in this structure.

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Physics and Technology of Nanostructured Materials IV

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Periodical:

Defect and Diffusion Forum (Volume 386)

Pages:

137-142

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.386.137

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Online since:

September 2018

Authors:

Tatiana A. Pisarenko*, Vyacheslav V. Balashev, Vladimir V. Korobtsov, Artem A. Dimitriev, Victor A. Vikulov

Keywords:

Built-In Electrical Field, Interface States, Iron, Lateral Photovoltage, Lateral Photovoltaic Effect, Metal-Oxide-Semiconductor Structure, Response Time, Silicon

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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