Conductivity Study of Initial Stages of β-PdBi₂ Formation on Bi/Si(111)

Abstract:

Bulk β-PdBi₂ layered material is known as a low-temperature superconductor. Recently, ultrathin films of this material consisting of dozens of triple layers were grown by molecular beam epitaxy and demonstrated structural, electronic and superconducting properties similar to those of bulk crystals. In this paper, we showed that thin film of β-PdBi₂ can be grown by alternative palladium and bismuth deposition and its electrical conductance was investigated at room temperature in comparison with the conductivity of bulk β - PdBi₂.

• Periodical: Defect and Diffusion Forum (Volume 386)
• Pages: 110-115
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.386.110
• Online since: September 2018
• Authors: Maxim Viktorovich Ivanchenko*, Elena Anatolyevna Borisenko, Maria Valeryevna Ryzhkova, Dmitry Anatolyevich Tsukanov
• Keywords: Bismuth, Four Point Probe Method, Low Energy Electron Diffraction, Palladium, Resistivity, Si(111), Surface Conductivity, Thin Films Growth

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