An Appropriate Diffusion Process Changes the Behaviour of a Planar-Nothing on Insulator Device

Abstract:

The paper investigates the tunneling currents through the gate terminals of the last MOSFET production and proposes a related structure, noted as p-NOI (planar-Nothing On Insulator) device. In fact, the p-NOI structure can arise as parasitic device in any MOSFET having a gate insulator sub-10nm thickness or can be separately produced to offer a tunneling device. The work principle of a p-NOI structure consists in the Fowler-Nordheim's tunneling of a thin insulator. Its architecture is derived from the Nothing On Insulator (NOI) device, using oxide instead vacuum. Essentially, the p-NOI current follows a metal-insulator-semiconductor trajectory. A critical issue is the field effect of a transistor that must be fulfilled by independent p-NOI device. In this purpose, a diffusion process seems to be the key. A planar p-NOI device with top three terminals is proposed. A diffusion process along to the Si-surface is a key technological step that offers distinct current traces.

• Periodical: Defect and Diffusion Forum (Volume 399)
• Pages: 115-122
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.399.115
• Online since: February 2020
• Authors: Cristian Ravariu*, Elena Manea, Cǎtǎlin Corneliu Pârvulescu
• Keywords: Devices, Diffusion, Simulation, Thin Oxides, Tunneling

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