Realization and Characterization of CH₃NH₃PbI₃ /c-Si Heterojunction

Abstract:

In the present work we have reported the realization and characterization of CH₃NH₃PbI₃/c-Si heterojunction. It was achieved by deposing CH₃NH₃PbI₃ perovskite film on (P) doped single crystalline Silicon (c-Si) substrate by spin coating. The structural, optical and electrical properties of perovskite film were investigated. The electric characterization of the realized device was achieved through I-V and G-f measurements. The recorded I-V characteristic exhibits a rectifier behavior. This curve was used also to determine diode parameters; the ideality factor, the saturation current, the series resistance and the potential barrier. However, the conductance method was used to assess the interface state N_ss via (G/ω) versus angular frequency ω curve. The results were used to justify the large values of the ideality factor and the series resistance.

• Periodical: Defect and Diffusion Forum (Volume 406)
• Pages: 364-374
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.406.364
• Online since: January 2021
• Authors: Fatima Khelfaoui*, Itidel Belaidi, Nadhir Attaf, Mohammed Salah Aida, Jamal Bougdira
• Keywords: CH₃NH₃PbI₃, C-Si, Heterojunction, Perovskite, Spin Coating

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