Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging

Takuya Morita; Yohsuke Matsushita; Yasuyuki Igarashi; Kazumi Takano

doi:10.4028/p-SHhhR7

Paper Titles

Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
p.1

Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
p.7

Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
p.15

Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
p.23

Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
p.33

Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
p.39

Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
p.45

The Role of Defects on SiC Device Performance and Ways to Mitigate them
p.51

Emission of Trapped Electrons from the 4H-SiC/SiO₂-Interface via Photon-Irradiance at Cryogenic Temperatures
p.61

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Early Detection of Bar-Shaped 1SSF before...

Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging

Abstract:

In this study, we investigated how bar-shaped 1SSF (Single Shockley-type stacking fault) in a chip of a SiC (Silicon Carbide) epitaxial wafer expanded with UV (ultraviolet) irradiation and observed it with PL (Photoluminescence) imaging and demonstrated early detection of bar-shaped 1SSF with an algorithm for automatic detection for the initial shape of bar-shaped 1SSF. Furthermore, we estimated that it was 83% how much UV irradiation time could be reduced.

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