Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates

Hidetsugu Uchida; Motoki Kobayashi; Naoki Hatta; Seiji Ishikawa; Kunihide Ozono; Keiko Masumoto; Shunsuke Kurihara; Shinsuke Harada; Kazutoshi Kojima

doi:10.4028/p-M70plj

Paper Titles

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Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
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Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
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Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
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Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
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Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
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The Role of Defects on SiC Device Performance and Ways to Mitigate them
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Emission of Trapped Electrons from the 4H-SiC/SiO₂-Interface via Photon-Irradiance at Cryogenic Temperatures
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SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 434Analysis of Forward Bias Degradation Reduction in...

Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates

Abstract:

Analysis of forward bias degradation reduction of 4H-Silicon Carbide (4H-SiC) PiN diodes on bonded substrates was performed. In the analysis, cathodoluminescence (CL), photoluminescence imaging (PL imaging), and transmission electron microscope (TEM) were used. Under high forward bias stress, the Shockley-type stacking fault (SSF) does not expand into the transferred layer of the bonded substrate, while in the monocrystalline substrate, the SSF expands below the epilayer/substrate interface. The basal plane dislocation (BPD) within the transferred layer does not expand to the SSF. The transferred layer has the effect of suppressing the expansion of SSFs. This effect can be caused by hydrogen implantation for wafer splitting to produce bonded SiC substrates.

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Periodical:

Defect and Diffusion Forum (Volume 434)

Pages:

39-44

DOI:

https://doi.org/10.4028/p-M70plj

Citation:

Cite this paper

Online since:

August 2024

Authors:

Hidetsugu Uchida*, Motoki Kobayashi, Naoki Hatta, Seiji Ishikawa, Kunihide Ozono, Keiko Masumoto, Shunsuke Kurihara, Shinsuke Harada, Kazutoshi Kojima

Keywords:

Basal Plane Dislocation, Bonded Substrate, Cathodoluminescence, Forward Bias Degradation, Shockley-Type Stacking Fault, TEM

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Creative Commons CC BY 4.0

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* - Corresponding Author

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